Add to ORKGThe k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k ·p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the 3C cubic phase. The full zone agreement is observed to span an energy window of more than 20 eV for Si, and 40 eV f...
Si and Ge nanocrystals embedded in a wide-gap semiconductor like $\alpha$-SiC are potentially intere...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
The k · p is a versatile technique that describes the semiconductor band structure in the vicinity o...
A strain Hamiltonian Hst, associated with a sps * k. p Hamiltonian Hkp, is used to describe the vale...
A simple model pseudopotential, particularly suitable for energy band calculations in elementary sem...
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
La structure de bandes d'énergie de plusieurs polytypes de SiC a été calculée par une méthode utilis...
Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D co...
The band structure of semiconductors was described by several theorists since the Fifties. The main ...
The binding energy (BE), the equilibrium lattice parameter (alpha-0), the bulk modulus (B), and the ...
A simple analytic local pseudopotential has been suggested for silicon. This pseudopotential has fou...
The binding energy (BE), the equilibrium lattice parameter (alpha-0), the bulk modulus (B), and the ...
Si and Ge nanocrystals embedded in a wide-gap semiconductor like $\alpha$-SiC are potentially intere...
Ab initio converged total-energy studies, and calculations of electronic states, pressure derivative...
Si and Ge nanocrystals embedded in a wide-gap semiconductor like $\alpha$-SiC are potentially intere...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
The k · p is a versatile technique that describes the semiconductor band structure in the vicinity o...
A strain Hamiltonian Hst, associated with a sps * k. p Hamiltonian Hkp, is used to describe the vale...
A simple model pseudopotential, particularly suitable for energy band calculations in elementary sem...
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
La structure de bandes d'énergie de plusieurs polytypes de SiC a été calculée par une méthode utilis...
Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D co...
The band structure of semiconductors was described by several theorists since the Fifties. The main ...
The binding energy (BE), the equilibrium lattice parameter (alpha-0), the bulk modulus (B), and the ...
A simple analytic local pseudopotential has been suggested for silicon. This pseudopotential has fou...
The binding energy (BE), the equilibrium lattice parameter (alpha-0), the bulk modulus (B), and the ...
Si and Ge nanocrystals embedded in a wide-gap semiconductor like $\alpha$-SiC are potentially intere...
Ab initio converged total-energy studies, and calculations of electronic states, pressure derivative...
Si and Ge nanocrystals embedded in a wide-gap semiconductor like $\alpha$-SiC are potentially intere...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...