Add to ORKGAbstract: Long term time dependent transients in l/f noise have been observed and are reported on NMOS transistors op-erating with switched gate bias. The results are interpreted as a modification of the time dependence of random telegraph signals. The results have important implications in the understanding of the nature of l/f noise and in the understanding the effect of l/f noise in switched capacitor and RF circuits with large amplitude switching gate voltages
Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface\ud channel device. Both n an...
In this thesis the low-frequency noise in MOSFETs under steady-state and dynamic biasing conditions ...
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arisin...
MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the lat...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lo...
The Iowlfreqnency noise power specrrunz qf small dimension MOSFETs is dominated by Lorenniuns arisin...
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
We study electronic transport and current noise in 50 nm gate length PMOSFETs at very low temperatur...
In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Si...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface\ud channel device. Both n an...
In this thesis the low-frequency noise in MOSFETs under steady-state and dynamic biasing conditions ...
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-ch...
The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arisin...
MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the lat...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lo...
The Iowlfreqnency noise power specrrunz qf small dimension MOSFETs is dominated by Lorenniuns arisin...
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
We study electronic transport and current noise in 50 nm gate length PMOSFETs at very low temperatur...
In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Si...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface\ud channel device. Both n an...
In this thesis the low-frequency noise in MOSFETs under steady-state and dynamic biasing conditions ...
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect...