Contact effects in organic and inorganic thin film transistors

Both organic and inorganic thin film transistors (TFTs) can be fabricated by forming Schottky barrier source/drain contacts. In particular in this work we analyzed the staggered configuration of Schottky barrier transistors and discussed three different cases, including organic, a-Si:H and InGaZnO TFTs. Device characteristics of these devices are seriously influenced by contact effects, with the parasitic voltage drops at the contacts reducing the effective voltages applied to the channel of the transistor. A simple method to extract the contact I-V characteristics is presented and, by using two-dimensional numerical simulations, the contact effects have been analyzed in great detail