Electrical Properties of MOCVD HfO2 Dielectric Layers With Polysilicon Gate Electrodes for CMOS Applications

Electrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900 "C Is activation anneal of Ph-doped 680 "C-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg=1.6E-04 A/cm2 at IVFB-ll which is> 2 orders of magnitude lower than SiOl with Poly-Si gate. A minimal degradation of leakage current after 900 "C activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD Hf02 gate stack. Nevertheless, upon loo0 "C activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was 2 order of magnitude higher compared to a 900 "C activation anneal