SiGe HBT simulation based on mp * (T, NA, xGE) numerical model HEM

Abstract: Modeling of effective densities of states Nytsioe m heterojunction bipolar transistor is presented, based on accurate determination of hole effective mass mp. Algorithm for calculation of hole effective mass mp is presented, which is optimized for numerical device modeling. Corresponding Fortran subroutine named HEM is discussed, which calculates hole effective mass in the temperature range of r=77K-3 OOK, base doping level bellow 1020cm"3 and germanium content xGe=0,00-0,30. Finally, Fortran subroutine HEM is incorporated into numerical device simulator MEDICI and tested through simulation of idealized heterojunction bipolar transistor. 1