P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping

Abstract—AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Fur-thermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7 % (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs. Index Terms—AlGaInP-based light-emitting diodes (LEDs), geometric sapphire shaping light-emitting diodes (GSS-LEDs), glue bonding (GB), sapphire chemical wet etching. I