Add to ORKGKaraiskaj et al. [1] showed that the isotopic randomness present in natural Si (natSi) causes a significant inhomogeneous broadening of many of the long-studied ground state to excited state infrared absorption transitions of the shallow donor phosphorous and accepto
Texto completo. Acesso restrito. p. 1 - 3The impurity density of states due to interacting donor-pai...
Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are simil...
We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV...
One of the oldest open questions in semiconductor physics is the origin of the small splittings of ...
The residual ground-state splitting of acceptors in high- quality silicon has been studied intensel...
Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping...
Detailed measurements and theoretical analysis are presented of the far-infrared absorption coeffici...
An investigation has been made into the possibility of observing optical transitions (in the 100-mic...
We report the first high resolution photoluminescence studies of isotopically pure silicon. New inf...
Infrared absorption cross sections and corresponding oscillator strengths of several intracenter tra...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
Infrared absorption cross sections and corresponding oscillator strengths of several intracenter tra...
A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been d...
In uncompensated phosphorus or arsenic-doped silicon, observation of the shallow, donor absorption l...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
Texto completo. Acesso restrito. p. 1 - 3The impurity density of states due to interacting donor-pai...
Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are simil...
We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV...
One of the oldest open questions in semiconductor physics is the origin of the small splittings of ...
The residual ground-state splitting of acceptors in high- quality silicon has been studied intensel...
Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping...
Detailed measurements and theoretical analysis are presented of the far-infrared absorption coeffici...
An investigation has been made into the possibility of observing optical transitions (in the 100-mic...
We report the first high resolution photoluminescence studies of isotopically pure silicon. New inf...
Infrared absorption cross sections and corresponding oscillator strengths of several intracenter tra...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
Infrared absorption cross sections and corresponding oscillator strengths of several intracenter tra...
A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been d...
In uncompensated phosphorus or arsenic-doped silicon, observation of the shallow, donor absorption l...
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical p...
Texto completo. Acesso restrito. p. 1 - 3The impurity density of states due to interacting donor-pai...
Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are simil...
We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV...