The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imaging. Since EUV masks are reflective, and the column is held in a vacuum, scanners have been designed to utilize electrostatic chucking. With the chucking system for EUV, the requirements for the backside of the mask must be redefined to integrate concerns in substrate design, mask manufacturing, and usage. The two key concerns with respect to an electrostatic chuck are defects and durability. Backside defects can affect imaging, while potentially damaging or contaminating the tool, the mask, or ev...
Mask defect is one of the biggest problems in Extreme Ultraviolet Lithography (EUV) technology. EUV ...
Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp)...
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
The International Technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) p...
The successful implementation of extreme ultraviolet lithography (EUVL) for patterning in the sub-32...
In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
Extreme ultraviolet lithography (EUVL) is expected to be used in device manufacturing starting at 32...
For future extreme ultra violet (ELTV) lithography at a wavelength of about 13 nm, flatness of the m...
Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes...
Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
Mask defect is one of the biggest problems in Extreme Ultraviolet Lithography (EUV) technology. EUV ...
Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp)...
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
The International Technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) p...
The successful implementation of extreme ultraviolet lithography (EUVL) for patterning in the sub-32...
In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
Extreme ultraviolet lithography (EUVL) is expected to be used in device manufacturing starting at 32...
For future extreme ultra violet (ELTV) lithography at a wavelength of about 13 nm, flatness of the m...
Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes...
Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
Mask defect is one of the biggest problems in Extreme Ultraviolet Lithography (EUV) technology. EUV ...
Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp)...
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV...