Add to ORKGA new paradigm for silicon memory technology is proposed. A technological breakthrough that will overcome the saturation in revenue obtained from ‘scaling’, a novel type of fusion memory is presented. A high-speed DRAM and non-volatile flash memory are integrated in a single memory transistor. The memory cell is named Unified-Random Access Memory (URAM), as multi-functional operation is processed in a single memory cell. The paradigm shift from ‘scaling ’ to ‘multi-function ’ will create new value and continue the evolution of silicon memory technology. 1
Emerging memories such as MRAM, PRAM, and RRAM have been extensively studied due to its various adva...
Digital computation has penetrated diversity of applications such as audio visual communication, bio...
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow-energy electron storag...
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on fu...
Semiconductor memory is one of the key technologies driving the success of Si-based information tech...
c © The Authors 2014. This paper is published with open access at SuperFri.org The memory system is ...
<p>The memory system is a fundamental performance and energy bottleneck in almost all computing syst...
The memory system is a fundamental performance and energy bottleneck in al-most all computing system...
In recent years, CMOS-based conventional memory technologies including SRAM, DRAM, and Flash memori...
A/i.~rrocf- This paper demonstrates that electronically passivated Si-Si02 interface enables the dev...
When the internet of things becomes the trend of development, our lives become more convenient with ...
Over the past three decades, the semiconductor memory business has flourished due to the great succe...
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storag...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
AbstractAn important task of micro- and nanoelectronics is establishing a new universal memory type ...
Emerging memories such as MRAM, PRAM, and RRAM have been extensively studied due to its various adva...
Digital computation has penetrated diversity of applications such as audio visual communication, bio...
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow-energy electron storag...
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on fu...
Semiconductor memory is one of the key technologies driving the success of Si-based information tech...
c © The Authors 2014. This paper is published with open access at SuperFri.org The memory system is ...
<p>The memory system is a fundamental performance and energy bottleneck in almost all computing syst...
The memory system is a fundamental performance and energy bottleneck in al-most all computing system...
In recent years, CMOS-based conventional memory technologies including SRAM, DRAM, and Flash memori...
A/i.~rrocf- This paper demonstrates that electronically passivated Si-Si02 interface enables the dev...
When the internet of things becomes the trend of development, our lives become more convenient with ...
Over the past three decades, the semiconductor memory business has flourished due to the great succe...
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storag...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
AbstractAn important task of micro- and nanoelectronics is establishing a new universal memory type ...
Emerging memories such as MRAM, PRAM, and RRAM have been extensively studied due to its various adva...
Digital computation has penetrated diversity of applications such as audio visual communication, bio...
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow-energy electron storag...