Add to ORKGVacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indi-cating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydro-fluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed under-neath thermally grown silicon oxide at 92 0°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstit...
AbstractSimple two-step wet-chemical cleans composed of an oxidizing step with in water dissolved oz...
Iron-related defects are deleterious in silicon-based integrated circuits and photovoltaics, ruining...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Iron-related defects cause major problems in silicon for both microelectronic devices and photovolta...
Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism...
Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type cry...
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gett...
In this work laboratory scale multicrystalline silicon ingots were grown which have been intentional...
The effects of iron, copper, and chrome on minority carrier diffusion length measurements in p type,...
The impact of iron point defects on the measured injection-dependent minority carrier lifetime in si...
Heavily contaminated multicrystalline silicon wafers have been studied using a scanning synchrotron ...
In this work, an extensive injection level dependent carrier lifetime study on intentionally iron co...
III-V multijunction solar cells grown on a Si solar cell are an attractive approach to reduce the co...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstit...
AbstractSimple two-step wet-chemical cleans composed of an oxidizing step with in water dissolved oz...
Iron-related defects are deleterious in silicon-based integrated circuits and photovoltaics, ruining...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Iron-related defects cause major problems in silicon for both microelectronic devices and photovolta...
Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism...
Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type cry...
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gett...
In this work laboratory scale multicrystalline silicon ingots were grown which have been intentional...
The effects of iron, copper, and chrome on minority carrier diffusion length measurements in p type,...
The impact of iron point defects on the measured injection-dependent minority carrier lifetime in si...
Heavily contaminated multicrystalline silicon wafers have been studied using a scanning synchrotron ...
In this work, an extensive injection level dependent carrier lifetime study on intentionally iron co...
III-V multijunction solar cells grown on a Si solar cell are an attractive approach to reduce the co...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstit...
AbstractSimple two-step wet-chemical cleans composed of an oxidizing step with in water dissolved oz...