III-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, large longitudinal optical phonon energy, inherit fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Thanks to these inherit advantages, they are investigated for everyday to military and scientific applications such as illumination sources; bio-agent detection, concealed weapons/drugs detection; and space exploration. With continuous developments in material growth/characterization and device processing/measurement technologies, gap engineered III-Nitride materials extend their unique solutions from ultraviolet and visible regime...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, ...
Conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Application...
A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented...
This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride b...
III-nitride wide bandgap semiconductors, such as GaN, InN, A1N and their ternary or quaternary alloy...
Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...
III-nitrides are promising materials for intersubband devices operating in the near- and far-infrare...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
The optical properties of the group-III-nitride materials are obviously of direct relevance for opto...
Thesis (Ph.D.)--Boston UniversityIn this research project I have investigated AIGaN alloys and their...
This thesis work features the exploration of the capabilities and limitations of devices based on MB...
This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride b...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, ...
Conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Application...
A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented...
This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride b...
III-nitride wide bandgap semiconductors, such as GaN, InN, A1N and their ternary or quaternary alloy...
Group III-nitride based heterostructures are of rapidly growing importance for the fabrication of sh...
III-nitrides are promising materials for intersubband devices operating in the near- and far-infrare...
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics material...
The optical properties of the group-III-nitride materials are obviously of direct relevance for opto...
Thesis (Ph.D.)--Boston UniversityIn this research project I have investigated AIGaN alloys and their...
This thesis work features the exploration of the capabilities and limitations of devices based on MB...
This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride b...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...
International audienceExtending the intersubband transitions in III-nitride nanostructures from near...