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emica ratio is us ring m 500 A t rece directly on an amorphous glass substrate. Though several methods spectively, whereas the spectral resolution of the UV-Raman spectra e Lett 23.00 Downlosuch as vapor–liquid–solid VLS, chemical vapor deposition CVD, and metallorganic chemical vapor deposition MOCVD have been employed for the growth of vertical ZnO nanorods, the growth temperatures in VLS and CVD are relatively high, well above the glass transition temperature.2-4,11 For transparent applica-tion, the relatively low synthesis temperature process should be de-veloped with a high uniformity and quality, and on a large scale. In this study, we have grown vertically aligned ZnO nanorod arrays on glass substrates by low-temperature MOCVD. The stress-free high-quality ZnO nanorods have been achieved by introducing a ZnO buffer. Their optical and structural properties were studied by pho-toluminescence, off-resonant, and UV resonant Raman scattering. The high-resolution Raman spectroscopy technique, being sensitive to atomic-scale disorder, provides useful information about the crys-talline properties of these nanorods. The 1D ZnO nanorods were grown on glass substrates with in-termediate buffer layers by MOCVD using a vertical cold-wall re-actor. The ZnO buffers were grown at a 5 Torr reactor pressure and at 300°C for different growth times 0–30 min. The maximum thickness of the buffer layer was 800 nm for a growth time of 30 min. The growth of ZnO nanorods was performed at a 1 Torr reactor was about 0.6 cm−1. Figure 1 shows the scanning electron microscopy SEM images of ZnO nanorods grown on glass substrates by MOCVD with ZnO buffer layers of different growth times 0, 1, 5, 10, 20, and 30 min fo