ANGULAR DISTRIBUTIONS OF GAMMA-RADIATION OF 1.2 GEV ELECTRONS IN SILICON MONOCRYSTALS OF GREAT THICKNESS

PACS number: 29.25.-t In the motion of relativistic electrons at a small an-gle to one of the crystallographic axes, coherence and interference effects manifest themselves in the radiation, owing to which the gamma-radiation intensity of parti-cles in the crystal may far exceed the intensity of radia-tion in amorphous medium. These effects can be used as the basis for creation of intense radiation sources with a high spectral-angular density of radiation. The intensity of electron radiation in the crystal is known to be proportional to the target thickness. There-fore, to create gamma-sources, it is advantageous to use thick crystals. However, with an increasing target thick-ness the average square of the angle of multiple electron scattering by atoms also increases, and this results i