NANO EXPRESS Impact of electrically form c

metal-insulator-metal structure shows promising charac-teristics in terms of scalability, low power operation, and multilevel data storage capability and is suitable for next-generation memory applications [1-4]. RRAM de-vices with simple structure and easy fabrication process that are compatible with high-density 3D integration [5] will be needed in the future. Various oxide switching [16-19], GdOx [20], TiOx [21-23], NiOx [24,25], ZrOx [26-29], ZnO [30-32], SiOx [33], and GeOx [34-36] have been used in nanoscale RRAM applications. However, their nonuniform switching and poorly understood switching mechanisms are currently the bottlenecks for the design of nanoscale resistive switching memory. Gen-erally, inert metal electrodes [4] and various interfacial methods are used to improve resistive switching memory characteristics. We previously reported polarity-dependent improved memory characteristics using IrOx nanodots (NDs) in an IrOx/AlOx/IrOx-NDs/AlOx/W structure [16]. However, improved memory performance using differen