ARTICLE

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (mRAm) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance mRAms that display significant improvements over existing mRAm technologies or proposed concepts. The proposed nanoscale mRAm device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch − 2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns