Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2
We constructed and operated an unstable ring resonator dye laser. A good beam quality and a low dive...
Broad Area Semiconductor edge-emitting lasers typically display self-focusing nonlinearity due to th...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...
An experimental study has been carried out on the spectral, modal, and dynamical properties of a mon...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
The development of high power, high brightness semiconductor lasers is important for applications su...
The properties of a laser beam coupled out of a standard unstable laser resonator are heavily depend...
A phase-locked array of several unstable resonator semiconductor lasers is demonstrated. Single late...
Some modern laser applications require continuous wave (CW) high power (>100 W), and diffraction l...
Les lasers chimiques de grande puissance ont souvent des régions de gain de grand allongement, pour ...
The application of standard unstable resonators does not allow for an independent adjustment of the ...
A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconducto...
GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time wi...
In this paper, we propose and demonstrate a solution to the problem of coherence degradation and col...
Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embo...
We constructed and operated an unstable ring resonator dye laser. A good beam quality and a low dive...
Broad Area Semiconductor edge-emitting lasers typically display self-focusing nonlinearity due to th...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...
An experimental study has been carried out on the spectral, modal, and dynamical properties of a mon...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
The development of high power, high brightness semiconductor lasers is important for applications su...
The properties of a laser beam coupled out of a standard unstable laser resonator are heavily depend...
A phase-locked array of several unstable resonator semiconductor lasers is demonstrated. Single late...
Some modern laser applications require continuous wave (CW) high power (>100 W), and diffraction l...
Les lasers chimiques de grande puissance ont souvent des régions de gain de grand allongement, pour ...
The application of standard unstable resonators does not allow for an independent adjustment of the ...
A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconducto...
GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time wi...
In this paper, we propose and demonstrate a solution to the problem of coherence degradation and col...
Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embo...
We constructed and operated an unstable ring resonator dye laser. A good beam quality and a low dive...
Broad Area Semiconductor edge-emitting lasers typically display self-focusing nonlinearity due to th...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...