A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion. keywords
Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving...
We discuss an extension of the Ramo–Shockley theorem that allows the calculation of signals in detec...
International audienceThe polarization of the electron-hole pairs induced by 80 MeV View the MathML ...
Verification and extensions of the Gaussian cloud dynamics model [1] for the induced current signal ...
Most particle detectors are based on the principle that charged particles leave a trail of ionizatio...
This lecture series discusses the mechanisms of signal generation in particle detectors as well as t...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
The electric field distribution inside heavily irradiated silicon particle detectors is deduced usin...
We have developed a full Monte Carlo simulation code to evaluate the electric signals produced by io...
We discuss a signal theorem for charged particle detectors where the finite propagation time of the ...
The problem of drifting charge-induced currents is considered in order to predict the pulsed operati...
mailto:vt11eonas($cc.uoa.gr In the present work we have conducted theoretical calculations of the tr...
This lecture series discusses the mechanisms of signal generation in particle detectors as well as t...
The energy deposited in a silicon detector by a heavy charged particle, such as an α-particle, creat...
A simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hol...
Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving...
We discuss an extension of the Ramo–Shockley theorem that allows the calculation of signals in detec...
International audienceThe polarization of the electron-hole pairs induced by 80 MeV View the MathML ...
Verification and extensions of the Gaussian cloud dynamics model [1] for the induced current signal ...
Most particle detectors are based on the principle that charged particles leave a trail of ionizatio...
This lecture series discusses the mechanisms of signal generation in particle detectors as well as t...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
The electric field distribution inside heavily irradiated silicon particle detectors is deduced usin...
We have developed a full Monte Carlo simulation code to evaluate the electric signals produced by io...
We discuss a signal theorem for charged particle detectors where the finite propagation time of the ...
The problem of drifting charge-induced currents is considered in order to predict the pulsed operati...
mailto:vt11eonas($cc.uoa.gr In the present work we have conducted theoretical calculations of the tr...
This lecture series discusses the mechanisms of signal generation in particle detectors as well as t...
The energy deposited in a silicon detector by a heavy charged particle, such as an α-particle, creat...
A simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hol...
Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving...
We discuss an extension of the Ramo–Shockley theorem that allows the calculation of signals in detec...
International audienceThe polarization of the electron-hole pairs induced by 80 MeV View the MathML ...