Abstract. We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions. This tool is used to experimentally study the field-induced switching of nanostrips which are locally irradiated. The boundary of the irradiated area indeed acts as a pinning barrier for the domain wall and the pinning strength increases with the anisotropy difference. Varying the thickness of the Co layer provides an...
Materials with perpendicular magnetic anisotropy (PMA) provide an excellent platform for a novel cla...
The interest in spintronics devices based on domain wall (DW) motion has gained attention for many y...
We present magnetic domain states in a material configuration with high (perpendicular) magnetic ani...
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered...
In experiments on current-driven domain wall (DW) motion in nanostrips with perpendicular magnetic a...
In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW positi...
We report on a novel approach to establish switchable pinning of magnetic domain walls in a nanowire...
With focused ion-beam irradiation it is possible to engineer the anisotropy of magnetic films on nan...
For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation...
We report on the controlled switching of domain-wall (DW) magnetization in aligned stripe-domain str...
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the ...
In the era of social media, storage of information plays an important role. Magnetic domain wall mem...
Materials with perpendicular magnetic anisotropy (PMA) provide an excellent platform for a novel cla...
The interest in spintronics devices based on domain wall (DW) motion has gained attention for many y...
We present magnetic domain states in a material configuration with high (perpendicular) magnetic ani...
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered...
In experiments on current-driven domain wall (DW) motion in nanostrips with perpendicular magnetic a...
In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW positi...
We report on a novel approach to establish switchable pinning of magnetic domain walls in a nanowire...
With focused ion-beam irradiation it is possible to engineer the anisotropy of magnetic films on nan...
For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation...
We report on the controlled switching of domain-wall (DW) magnetization in aligned stripe-domain str...
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the ...
In the era of social media, storage of information plays an important role. Magnetic domain wall mem...
Materials with perpendicular magnetic anisotropy (PMA) provide an excellent platform for a novel cla...
The interest in spintronics devices based on domain wall (DW) motion has gained attention for many y...
We present magnetic domain states in a material configuration with high (perpendicular) magnetic ani...