Abstract We extend results by Stotland and Di Ventra [1] on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism un-derlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio dependence with noise power. In the case of internal noise we find an optimal range where the EPIR ratio is both maximized and independent of the preceding resistive state. However, when external noise is considered no beneficial effect is observed.
A model for the 1/f noise in large signal operation of linear passive one-port (e.g. carbon or polys...
Stochastic resonance (SR), a phenomenon in which a periodic signal in a nonlinear system can be ampl...
Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile stori...
We study the effect of external noise on resistive switching. Experimental results on a manganite sa...
In this paper we study the role of noise in the context of resistive switching phenomena by means of...
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaus...
We study the effect of internal and external noise on the phenomenon of resistive switching. We cons...
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time ...
Noise is a key factor in information processing systems. This fact will be even more critical in new...
International audienceElectronic circuits are built by combining components with known current/volta...
The equivalent input noise for some active circuits does not increase when the signal bandwidth incr...
In this study, the possibilities of noise tailoring in filamentary resistive switching memory device...
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of...
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When ...
A model for the 1/f noise in passive components undergoing time-varying bias is proposed. One-port d...
A model for the 1/f noise in large signal operation of linear passive one-port (e.g. carbon or polys...
Stochastic resonance (SR), a phenomenon in which a periodic signal in a nonlinear system can be ampl...
Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile stori...
We study the effect of external noise on resistive switching. Experimental results on a manganite sa...
In this paper we study the role of noise in the context of resistive switching phenomena by means of...
Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaus...
We study the effect of internal and external noise on the phenomenon of resistive switching. We cons...
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time ...
Noise is a key factor in information processing systems. This fact will be even more critical in new...
International audienceElectronic circuits are built by combining components with known current/volta...
The equivalent input noise for some active circuits does not increase when the signal bandwidth incr...
In this study, the possibilities of noise tailoring in filamentary resistive switching memory device...
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of...
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When ...
A model for the 1/f noise in passive components undergoing time-varying bias is proposed. One-port d...
A model for the 1/f noise in large signal operation of linear passive one-port (e.g. carbon or polys...
Stochastic resonance (SR), a phenomenon in which a periodic signal in a nonlinear system can be ampl...
Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile stori...