GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide surface, and the semiconducting GaAs nanowires grew epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes in the oxide film. We observed two stages of growth of the GaAs nanowires, first the regular growth and second the residual growth after the Ga supply was finished. The mag-netic Fe3Si shells were deposited in an As-free chamber. They completely cover the GaAs cores although they consist of small grains. High-resolution TEM micrographs depict the differently ori...
In this work, we report on the microstructural and morphological characterization of III-V semicondu...
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered b...
In this work we present new results on the morphological and microstructural properties of GaAs-AlxG...
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on...
GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(1...
Growth kinetics of GaAs nanowires (NWs) on Si(111) substrates by Ga-assisted chemical beam epitaxy i...
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered b...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires (NWs) growth kinetics by Ga-assisted chemical beam epitaxy on Si(111) substrates is s...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
International audienceThe reproducibility of self-catalyzed molecular beam epitaxy growth of GaAs na...
In this work, we report on the microstructural and morphological characterization of III-V semicondu...
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered b...
In this work we present new results on the morphological and microstructural properties of GaAs-AlxG...
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on...
GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(1...
Growth kinetics of GaAs nanowires (NWs) on Si(111) substrates by Ga-assisted chemical beam epitaxy i...
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered b...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface ...
GaAs nanowires (NWs) growth kinetics by Ga-assisted chemical beam epitaxy on Si(111) substrates is s...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs...
We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by ...
International audienceThe reproducibility of self-catalyzed molecular beam epitaxy growth of GaAs na...
In this work, we report on the microstructural and morphological characterization of III-V semicondu...
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered b...
In this work we present new results on the morphological and microstructural properties of GaAs-AlxG...