Add to ORKGThe surface of semi-isolating GaAs (100) was irradiated with a fluence of 6 × 1017 cm−2 of the N+2 io
The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-i...
According to established ideas, the irradiation by energetic ions induces a significant number of po...
peer reviewedThe authors report on the fabrication and characterization of photodetectors based on n...
The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion...
Radiation damage and Surface modifications of semi-insulating GaAs(0 0 1) substrates upon 1 MeV C<SU...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
Effect of 100 MeV 197Au implantation, followed by Rapid Thermal Annealing on electrical and optical ...
Effect of 100 MeV 197Au implantation, followedby Rapid Thermal Annealing on electrical and opticalch...
140 keV Zn+ ions have been implantedon (1 0 0) GaAs surfaces at a dose of 1014 cm 2 andd ifferent io...
It is shown that the damage measured following 40 keV P+ implantation into GaAs at room temperature,...
3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decre...
Electronic properties of Si and Mg implants in undoped semi-insulating GaAs are studied. The activat...
Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Monte Undoped semi-insulating GaA...
In this paper we present the results of two new experiments (1) Infrared Reflectivity (IR) measureme...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-i...
According to established ideas, the irradiation by energetic ions induces a significant number of po...
peer reviewedThe authors report on the fabrication and characterization of photodetectors based on n...
The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion...
Radiation damage and Surface modifications of semi-insulating GaAs(0 0 1) substrates upon 1 MeV C<SU...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
Effect of 100 MeV 197Au implantation, followed by Rapid Thermal Annealing on electrical and optical ...
Effect of 100 MeV 197Au implantation, followedby Rapid Thermal Annealing on electrical and opticalch...
140 keV Zn+ ions have been implantedon (1 0 0) GaAs surfaces at a dose of 1014 cm 2 andd ifferent io...
It is shown that the damage measured following 40 keV P+ implantation into GaAs at room temperature,...
3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decre...
Electronic properties of Si and Mg implants in undoped semi-insulating GaAs are studied. The activat...
Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Monte Undoped semi-insulating GaA...
In this paper we present the results of two new experiments (1) Infrared Reflectivity (IR) measureme...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-i...
According to established ideas, the irradiation by energetic ions induces a significant number of po...
peer reviewedThe authors report on the fabrication and characterization of photodetectors based on n...