This paper addresses at first carbon NanoTubes (CNTs) and importance of CNT over silicon based devices has been discussed and then exploring the recent survey on CNTFET structure. In this work, the performance of carbon Nanotube field effect transistors is evaluated and analysis by using digital logic circuit. We know that CNT had proposed as alternative to silicon CMOS technology.CNT having two types that are one is MOSFET type and other one is Schottky-barrier(SB).both types of CNT conduct electron and holes to showing a p-type and n-type behavior. In this model CNTFET based devices offer high mobility for near ballistic transport and high carrier velocity for fast switching. CNFET based device offering molecular devices of technology tha...
This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), align...
The goal of the present work is to explore the concept of nanotechnology, carbon nanotubes and its f...
As the physical gate length of current devices is reduced to below 65 nm, effects (such as large par...
Scaling down of Semiconductor Devices in nanometer range has been almost stagnated due to various ob...
International audienceThis paper examines aspects of design technology required to explore advanced ...
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After...
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters a...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the pe...
We demonstrate logic circuits with carbon nanotube field-effect transistors (CNTFETs). The p-type CN...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, ma...
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters a...
Abstract: A detailed review on the Carbon Nanotube Filed Effect Transistors (CNTFETs) has been given...
This paper discusses a comprehensive analytical study of electrical properties of single‐wall conven...
International audienceThis paper deals with the analysis of static and dynamic behaviors of several ...
This thesis is a study on designing, understanding and performance benchmarking of FPGA (Field Progr...
This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), align...
The goal of the present work is to explore the concept of nanotechnology, carbon nanotubes and its f...
As the physical gate length of current devices is reduced to below 65 nm, effects (such as large par...
Scaling down of Semiconductor Devices in nanometer range has been almost stagnated due to various ob...
International audienceThis paper examines aspects of design technology required to explore advanced ...
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After...
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters a...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the pe...
We demonstrate logic circuits with carbon nanotube field-effect transistors (CNTFETs). The p-type CN...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, ma...
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters a...
Abstract: A detailed review on the Carbon Nanotube Filed Effect Transistors (CNTFETs) has been given...
This paper discusses a comprehensive analytical study of electrical properties of single‐wall conven...
International audienceThis paper deals with the analysis of static and dynamic behaviors of several ...
This thesis is a study on designing, understanding and performance benchmarking of FPGA (Field Progr...
This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), align...
The goal of the present work is to explore the concept of nanotechnology, carbon nanotubes and its f...
As the physical gate length of current devices is reduced to below 65 nm, effects (such as large par...