Add to ORKGABSTRACT: Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.6Ge0.4 barriers on a relaxed Si0.8Ge0.2 n-type substrate, designed to demonstrate negative differential resistance. The analysis of the diffraction data obtained, using synchrotron facility, has been simulated using a standard matrix approach for calculating conventional diffraction from multilayers
This thesis concerns different kinds of tunneling based devices all showing negative differential re...
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on ...
Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma...
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barri...
Resonant tunneling diodes have been fabricated using graded Si1−xGex (x=0.3→0.0) spacer wells and st...
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The e...
We present a TEM analysis of a series of Si/SiGe resonant tunnelling diode structures which contai...
Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by va...
We study resonant tunneling in B-8-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi a...
Small area resonant tunneling diodes (RTDs) with strained Si/sub 0.4/Ge/sub 0.6/ potential barriers ...
Over the three-year course of this program, several issues in the device physics of resonant-tunneli...
International audienceAlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam...
International audienceAlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam...
[[sponsorship]]應用科學研究中心[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/G...
For the purpose of heterointegration of Si-based group IV semiconductor quantum effect devices into ...
This thesis concerns different kinds of tunneling based devices all showing negative differential re...
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on ...
Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma...
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barri...
Resonant tunneling diodes have been fabricated using graded Si1−xGex (x=0.3→0.0) spacer wells and st...
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The e...
We present a TEM analysis of a series of Si/SiGe resonant tunnelling diode structures which contai...
Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by va...
We study resonant tunneling in B-8-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi a...
Small area resonant tunneling diodes (RTDs) with strained Si/sub 0.4/Ge/sub 0.6/ potential barriers ...
Over the three-year course of this program, several issues in the device physics of resonant-tunneli...
International audienceAlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam...
International audienceAlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam...
[[sponsorship]]應用科學研究中心[[note]]已出版;[SCI];有審查制度;具代表性[[note]]http://gateway.isiknowledge.com/gateway/G...
For the purpose of heterointegration of Si-based group IV semiconductor quantum effect devices into ...
This thesis concerns different kinds of tunneling based devices all showing negative differential re...
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on ...
Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma...