Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar

A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending Esbb at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height ϕb0 (variation of the surface band bending Esbb) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells