, O. Rowi«ski f

The low power reactor for microwave chemical vapor deposition process is described. The rotating Mo holder of 12 mm diameter and 6 mm height with the diamond substrate was heated by 2.45 GHz microwaves to temperature about 800 C in the range of (1.57) % CH4/H2 mixture to create plasma at pressure 70 Tr. Stabilization of the holder temperature was performed by optical observation of radiation from the holder followed by adjusting of the magnetron power. Diamond detectors are produced using microwave chemical vapor deposition process grown on single crystal diamond high pressure high temperature Sumimoto substrates, [100] oriented. The response of diamond detectors for X-rays has been measured in the current mode using medical X-rays tube. The linear response of the diamond detector current versus X-ray tube current (dose) is presented. DOI: 10.12693/APhysPolA.127.155