Abstract—Random telegraph noise (RTN) is one of the critical re-liability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits ’ temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4 % degradation and 59.9 % variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect. Index Terms—Random telegraph noise, Performance degradation, Mitigation technique I
This letter presents a numerical investigation of the statistical distribution of the random telegra...
In this work, we report a detailed discussion on the techniques and the requirements needed to enabl...
With the ever-increasing importance of temporal transistor variations during circuit run time and ag...
Abstract—Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm tech...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale ...
The power consumption of digital circuits is proportional to the square of operation voltage and the...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for sma...
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characteriza...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
Since devices actually operate under AC signals in digital circuits, it is more informative to study...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
In this work, we report a detailed discussion on the techniques and the requirements needed to enabl...
With the ever-increasing importance of temporal transistor variations during circuit run time and ag...
Abstract—Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm tech...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale ...
The power consumption of digital circuits is proportional to the square of operation voltage and the...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for sma...
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characteriza...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
Since devices actually operate under AC signals in digital circuits, it is more informative to study...
This letter presents a numerical investigation of the statistical distribution of the random telegra...
In this work, we report a detailed discussion on the techniques and the requirements needed to enabl...
With the ever-increasing importance of temporal transistor variations during circuit run time and ag...