Add to ORKGAbstract-Degradation of device parameters over the lifetime of a system is emerging as a significant threat to system reliability. Among the aging mechanisms, wearout resulting from NBTI is of particular concern in deep submicron technology generations. To facilitate architectural level aging analysis, a tool capable of evaluating NBTI vulnerabilities early in the design cycle has been developed. The tool includes workload-based temperature and performance degradation analysis across a variety of technologies and operating conditions, revealing a complex interplay between factors influencing NBTI timing degradation. I
A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It c...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
In deeply scaled CMOS technologies, device aging causes cores performance parameters to degrade over...
Abstract-Degradation of device parameters over the lifetime of a system is emerging as a significant...
In deeply scaled CMOS technologies, device aging causes transistor performance parameters to degrade...
Frontend and backend wearout mechanisms are major reliability concerns for modern microprocessors. I...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
Abstract—With shrinking feature sizes, transistor aging due to NBTI and HCI becomes a major reliabil...
The significance of transistor degradation due to aging mechanisms such as BTI or HCI has increased ...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
The significance of transistor degradation due to aging mechanisms such as BTI or HCI has increased ...
© 2015 Elsevier B.V. Negative Bias Temperature Instability (NBTI) is one of the major time-dependent...
CMOS transistors come with a scaling potential, which brings along challenges such as process variat...
Negative-Bias Temperature Instability seriously affects nanoscale circuits reliability and performan...
A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It c...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
In deeply scaled CMOS technologies, device aging causes cores performance parameters to degrade over...
Abstract-Degradation of device parameters over the lifetime of a system is emerging as a significant...
In deeply scaled CMOS technologies, device aging causes transistor performance parameters to degrade...
Frontend and backend wearout mechanisms are major reliability concerns for modern microprocessors. I...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
Abstract—With shrinking feature sizes, transistor aging due to NBTI and HCI becomes a major reliabil...
The significance of transistor degradation due to aging mechanisms such as BTI or HCI has increased ...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
The significance of transistor degradation due to aging mechanisms such as BTI or HCI has increased ...
© 2015 Elsevier B.V. Negative Bias Temperature Instability (NBTI) is one of the major time-dependent...
CMOS transistors come with a scaling potential, which brings along challenges such as process variat...
Negative-Bias Temperature Instability seriously affects nanoscale circuits reliability and performan...
A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It c...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
In deeply scaled CMOS technologies, device aging causes cores performance parameters to degrade over...