Compact InAlAs–InGaAs Metal–Semiconductor– Metal Photodetectors Integrated on Silicon-on- Insulator Waveguides

Abstract—We present measurement results of compact and efficient InAlAs–InGaAs metal–semiconductor–metal photodetec-tors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI sub-strate by means of low-temperature die-to-wafer bonding using divinyldisiloxane benzocyclobutene (DVS-BCB). The responsivity of a 30- m-long detector is 1.0 A/W at a wavelength of 1550 nm and the dark current is 4.5 nA at a bias voltage of 5 V. Index Terms—Heterogeneous integration, photodetector, pho-tonic integrated circuit, silicon-on-insulator (SOI)