When exposed to an harsh environment in space, high atmosphere or even on earth, Integrated Circuits undergo soft errors. Among these events the most worrying is an electrical upset, so called Single Event Upset (SEU) evidenced in latches. We present here the circuit architecture of a new SEU hardened latch. The hardening is based on an integrated redundancy of the information and a high impedance state switching. The design prevents perturbation to propagate inside the latch and saves an uncorrupted information source for recovery mechanisms. Post layout circuit simulations are used to verify the hardness assurance of this design; we also compare it to usual techniques and report significant improvements for its use in SoC
This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event ...
In a near future of high-density and low-power technologies, the study of soft errors will not only ...
Abstract—A new circuit-level single-event upset (SEU) hard-ening approach for high-speed SiGe HBT cu...
Abstract: A single event upset (SEU) tolerant latchwith a triple-interlocked structure is presented....
This invention is comprised of a logical memory latch and cell, using logic and circuit modification...
Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A ...
International audienceThe behaviour of Integrated Circuits (IC), in Space, the high atmosphere or ev...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
Latches based on the Dual Interlocked storage Cell or DICE are very tolerant to Single Event Upsets ...
In this paper, we analyze the conditions making transient faults (TFs) affecting the nodes of conven...
To avoid soft errors in integrated circuits, this paper presents two high-performance latch designs,...
In this paper, we analyze the conditions making transient faults (TFs) affecting the nodes of conven...
In radioactive environments, particle strikes can induce transient errors in integrated circuits (IC...
ISBN 978-1-4419-6992-7; e-ISBN 978-1-4419-6993-4In nanometric technologies, circuits are increasingl...
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed...
This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event ...
In a near future of high-density and low-power technologies, the study of soft errors will not only ...
Abstract—A new circuit-level single-event upset (SEU) hard-ening approach for high-speed SiGe HBT cu...
Abstract: A single event upset (SEU) tolerant latchwith a triple-interlocked structure is presented....
This invention is comprised of a logical memory latch and cell, using logic and circuit modification...
Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A ...
International audienceThe behaviour of Integrated Circuits (IC), in Space, the high atmosphere or ev...
A single event causing a double-node upset is likely to occur in nanometric complementary metal-oxid...
Latches based on the Dual Interlocked storage Cell or DICE are very tolerant to Single Event Upsets ...
In this paper, we analyze the conditions making transient faults (TFs) affecting the nodes of conven...
To avoid soft errors in integrated circuits, this paper presents two high-performance latch designs,...
In this paper, we analyze the conditions making transient faults (TFs) affecting the nodes of conven...
In radioactive environments, particle strikes can induce transient errors in integrated circuits (IC...
ISBN 978-1-4419-6992-7; e-ISBN 978-1-4419-6993-4In nanometric technologies, circuits are increasingl...
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed...
This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event ...
In a near future of high-density and low-power technologies, the study of soft errors will not only ...
Abstract—A new circuit-level single-event upset (SEU) hard-ening approach for high-speed SiGe HBT cu...