We have calculated the effects of quantum confinement on maximum achievable free carrier concentrations in semiconductor nanowires. Our calculations are based on the amphoteric defect model, which describes the thermodynamic doping limit in semiconductors in terms of the compensation of external dopants by native defects. We find that the generation of amphoteric native defects strongly limits maximum achievable carrier concentrations for nanowires with small widths where quantum confinement is appreciable. The magnitude of this effect in a given material is found to be determined by two material properties: the effective mass of the free carriers, and the position of the conduction (n-type) or valence band (p-type) edge on the absolute ene...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...
International audienceThis work theoretically studies the influence of both the geometry and the dis...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...
Energy bandgaps are observed to increase with decreasing diameter due to quantum confinement in quas...
Calculations of the electronic states of donor and acceptor impurities in nanowires show that the io...
The Wiedemann–Franz law states that the charge conductance and the electronic contribution to the he...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
Confinement effect on semiconductor nanowires properties. Alexis Nduwimana 100 pages ...
Abstract This chapter addresses the fundamental concepts needed to understand the impact of size red...
The role of defects in materials is one of the long-standing issues in solid-state chemistry and phy...
This thesis describes a series of experiments aimed at understanding the low-temperature electrical ...
Understanding the electronic properties of dopants near an interface is a critical challenge for nan...
We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by pat...
The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and Z...
A scheme has been devised to determine the shifts of the conduction band minimum of semiconductors a...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...
International audienceThis work theoretically studies the influence of both the geometry and the dis...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...
Energy bandgaps are observed to increase with decreasing diameter due to quantum confinement in quas...
Calculations of the electronic states of donor and acceptor impurities in nanowires show that the io...
The Wiedemann–Franz law states that the charge conductance and the electronic contribution to the he...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
Confinement effect on semiconductor nanowires properties. Alexis Nduwimana 100 pages ...
Abstract This chapter addresses the fundamental concepts needed to understand the impact of size red...
The role of defects in materials is one of the long-standing issues in solid-state chemistry and phy...
This thesis describes a series of experiments aimed at understanding the low-temperature electrical ...
Understanding the electronic properties of dopants near an interface is a critical challenge for nan...
We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by pat...
The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and Z...
A scheme has been devised to determine the shifts of the conduction band minimum of semiconductors a...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...
International audienceThis work theoretically studies the influence of both the geometry and the dis...
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the ...