Detailed study of AlAs-oxidized apertures in VCSEL cavities for optimized modal performance

Abstract—We present a numerical optical model for calculating threshold material gain in vertical-cavity surface-emitting lasers. It is based on a vectorial solution of Maxwell’s equations and therefore gives exact results where other approaches fail, e.g., in the case of oxide-confined devices, which have high lateral index contrasts. Results are given concerning the influence of oxide window thickness and position on threshold gain and modal stability. We also propose an intuitive plane-wave model to enhance the physical understanding of these effects. Index Terms—Distributed Bragg reflector lasers, laser modes, semiconductor device modeling, semiconductor lasers, surface-emitting lasers. I