Add to ORKGAbstract An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected
Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading,...
The present article deals with device physics and modeling of an Hg0.28Cd0.72Te wide-area electron-i...
Major advances in fiber optic transmissions have brought about a need for highly sensitive photodete...
Abstract—A small signal analysis for a separate-absorption-charge-multiplication (SACM) avalanche ph...
Avalanche photodetectors (APDs) with internal gain are a natural choice for applications when high s...
Abstract: In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photo...
Abstract—The Ge/Si system is useful to realize avalanche pho-todetectors (APDs) operating at 1310155...
Absiruct-We present analytical expressions for the frequency response of avalanche photodetectors (A...
Abstract: A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain...
In this letter, we present a detailed circuit model for single-photon avalanche diodes. The model ca...
Photodetectors having an internal carrier multiplication mechanism such as avalanche detectors and r...
Avalanche photodiodes (APDs) operating at 1.55 μm wavelength are used in many different applications...
An improved version of the Random Path Length algorithm is used to simulate the time response of Sep...
In this paper we present a physically-based model aimed at calculating the Photon Detection Efficien...
Abstract:- A theoretical model of a waveguide avalanche photodiode (WG-APD) for an InGaAs/InP with s...
Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading,...
The present article deals with device physics and modeling of an Hg0.28Cd0.72Te wide-area electron-i...
Major advances in fiber optic transmissions have brought about a need for highly sensitive photodete...
Abstract—A small signal analysis for a separate-absorption-charge-multiplication (SACM) avalanche ph...
Avalanche photodetectors (APDs) with internal gain are a natural choice for applications when high s...
Abstract: In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photo...
Abstract—The Ge/Si system is useful to realize avalanche pho-todetectors (APDs) operating at 1310155...
Absiruct-We present analytical expressions for the frequency response of avalanche photodetectors (A...
Abstract: A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain...
In this letter, we present a detailed circuit model for single-photon avalanche diodes. The model ca...
Photodetectors having an internal carrier multiplication mechanism such as avalanche detectors and r...
Avalanche photodiodes (APDs) operating at 1.55 μm wavelength are used in many different applications...
An improved version of the Random Path Length algorithm is used to simulate the time response of Sep...
In this paper we present a physically-based model aimed at calculating the Photon Detection Efficien...
Abstract:- A theoretical model of a waveguide avalanche photodiode (WG-APD) for an InGaAs/InP with s...
Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading,...
The present article deals with device physics and modeling of an Hg0.28Cd0.72Te wide-area electron-i...
Major advances in fiber optic transmissions have brought about a need for highly sensitive photodete...