GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer

Abstract — GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-µm-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described. Index Terms — Resonant-cavity light-emitting diode, GaN-based LED, current blocking layer, vertical cavity surface emitting laser. I