Add to ORKGThe application of exact two-dimensional numerical computer models has found wider use during the past few years. As far as we know these models have been totally limited t
In this chapter, we present the capabilities of the VHDL-AMS hardware description language for devel...
COMPUTER SCIENCE The compact model of a circuit or device is a system of linear and/or nonlinear dif...
As the feature size of silicon transistors has been ultra-scaled down to a few nanometres, technical...
been an incentive to concentrate-persistently on device modeling. The fundamental properties which r...
This chapter provides a short overview on the basics of CMOS transistor modeling with respect to dee...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
Analytical Verilog‐A compatible 2D model including quantum short channel effects and confinement for...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry sta...
As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an impr...
775-782 A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulato...
Practicing designers, students, and educators in the semiconductor field face an ever expanding port...
Des calculs analytiques détaillées, à partir de quelques modèles physiques de base, prouvent que le ...
Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visib...
An improved analytical model for IGB power transistors has been developed for circuit simulators. Sp...
In this chapter, we present the capabilities of the VHDL-AMS hardware description language for devel...
COMPUTER SCIENCE The compact model of a circuit or device is a system of linear and/or nonlinear dif...
As the feature size of silicon transistors has been ultra-scaled down to a few nanometres, technical...
been an incentive to concentrate-persistently on device modeling. The fundamental properties which r...
This chapter provides a short overview on the basics of CMOS transistor modeling with respect to dee...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
Analytical Verilog‐A compatible 2D model including quantum short channel effects and confinement for...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry sta...
As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an impr...
775-782 A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulato...
Practicing designers, students, and educators in the semiconductor field face an ever expanding port...
Des calculs analytiques détaillées, à partir de quelques modèles physiques de base, prouvent que le ...
Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visib...
An improved analytical model for IGB power transistors has been developed for circuit simulators. Sp...
In this chapter, we present the capabilities of the VHDL-AMS hardware description language for devel...
COMPUTER SCIENCE The compact model of a circuit or device is a system of linear and/or nonlinear dif...
As the feature size of silicon transistors has been ultra-scaled down to a few nanometres, technical...