Abstract—GaAs–AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) faces. These surfaces were studied using high resolution scanning electron microscopy where the secondary elec-tron images reveal contrast between the GaAs and AlAs layers and also indicate that the AlAs layers are topographically raised with respect to the GaAs. Atomic force microscopy of the same samples shows that the AlAs ridges can extend as far as 55 nm beyond the GaAs surface. Further secondary electron images of cross-sections of plastically deformed GaAs–AlAs superlattices reveal that the AlAs layers can undergo severe deformation whereas the GaAs layers fracture more readily. It is proposed that the AlAs protrusions on the (110) cleava...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.Described in this thesis are ...
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs...
We present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning f...
Single crystal gallium arsenide (GaAs) specimens were loaded to failure. Scanning electron microscop...
[[abstract]]Reflection electron microscopy (REM) has been applied to studying the (110) cleavage pla...
EnIn this work we report the experimental results on AFM analysis of cleavages of multilayer GaAs...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Atomic configurations of cleaved GaAs (110) surfaces are analysed to check existing models of cleava...
Low- and high-angle X-ray diffraction patterns have been obtained from one-dimensional superlattice ...
Strained and partially relaxed superlattices (SL) of GaInAs/GaAs superlattices (SLs) were grown on G...
The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs. superlat...
The atomic structure of interfaces in GaAs/AlAs heterostructures was observed in high resolution ele...
Four InxGa1-xAs/GaAs strained-layer superlattices grown by molecular beam epitaxy have been studied ...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.Described in this thesis are ...
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs...
We present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning f...
Single crystal gallium arsenide (GaAs) specimens were loaded to failure. Scanning electron microscop...
[[abstract]]Reflection electron microscopy (REM) has been applied to studying the (110) cleavage pla...
EnIn this work we report the experimental results on AFM analysis of cleavages of multilayer GaAs...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Atomic configurations of cleaved GaAs (110) surfaces are analysed to check existing models of cleava...
Low- and high-angle X-ray diffraction patterns have been obtained from one-dimensional superlattice ...
Strained and partially relaxed superlattices (SL) of GaInAs/GaAs superlattices (SLs) were grown on G...
The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs. superlat...
The atomic structure of interfaces in GaAs/AlAs heterostructures was observed in high resolution ele...
Four InxGa1-xAs/GaAs strained-layer superlattices grown by molecular beam epitaxy have been studied ...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.Described in this thesis are ...
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs...