Design and Reliability Analysis of Multiple Valued Logic Gates using Carbon Nanotube FETs

Abstract—With emerging nanometric technologies, multiple valued logic (MVL) circuits have attracted significant attention due to advantages in information density and operating speed. In this paper, a pseudo complementary MVL design is initially proposed for implementations using carbon nanotube field effect transistors (CNTFETs). This design utilizes no resistors in its operation. To account for the properties and fabrication non-idealities of CNTFETs, a transistor-level reliability analysis is proposed to accurately estimate the error rates of MVL gates. This approach considers gate structures and their operation, so it yields a more realistic framework than a logic-level analysis of reliability. To achieve scalability, stochastic computational models are developed to accurately and efficiently analyze MVL gates; the extension of these models to circuits is briefly discussed. Keywords- multiple valued logic (MVL); carbon nanotube field effect transistors (CNTFETs); reliability; stochastic computational models (SCMs) I