Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers

laser is found to dramatically affect the temperature sensitivity of the current injection efficiency ( inj) and material gain parameter oJ). The increased temperature sensitivity of inj and oJ of In-GaAsN QW lasers with increasing N-content leads to a significant increase in their temperature sensitivity of threshold current and external differential quantum efficiency. Increasing the N-content of the InGaAsN QW potentially results in a reduction of the heavy hole confinement, which may account for the increased tempera-ture sensitivity of the current injection efficiency. Index Terms—Current injection efficiency, InGaAsN, long wave-length quantum-well (QW) laser, material gain, temperature sen-sitivity, thermionic carrier leakage. I