Abstract—Optical modulation response experiments above threshold are carried out in ridge waveguide InGaAs and InGaAsN (N = 0:5%) in a temperature span of 10 C–80 C. The modulation traces are analyzed with a complete rate equation model that allows extraction of the resonance frequency and damping that are intrinsic to the carrier and photon processes occurring in the laser active region. This analysis enables calcu-lation of the K-factor and its temperature behavior. K-values for InGaAsN lasers are larger and show a more pronounced dependence on temperature than in InGaAs lasers. This behavior is ascribed to a decrease in the effective differential gain with nitrogen content. Index Terms—3-dB bandwidth, InGaAsN quantum-well (QW) lasers, mo...
We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconducto...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
We have measured the small-signal modulation response of 1.3-μm ridge waveguide GaInNAs double quant...
laser is found to dramatically affect the temperature sensitivity of the current injection efficienc...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
In this work the examination of tweak reaction of a 450 nm InGaN based multi-quantum well (MQW) hone...
Temperature is a key factor in determining the output stability of lasers. The performance of lasers...
In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry P...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconducto...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of ...
We have measured the small-signal modulation response of 1.3-μm ridge waveguide GaInNAs double quant...
laser is found to dramatically affect the temperature sensitivity of the current injection efficienc...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networ...
In this work the examination of tweak reaction of a 450 nm InGaN based multi-quantum well (MQW) hone...
Temperature is a key factor in determining the output stability of lasers. The performance of lasers...
In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry P...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.A comprehensive study of tempe...
We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconducto...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...