The Role of Carrier Transport on the Current Injection Efficiency of InGaAsN Quantum-Well Lasers

Abstract—A theoretical and experimental study demonstrates that the current injection efficiency of InGaAsN quantum-well (QW) lasers can be significantly affected by carrier transport in the separate confinement heterostructure (SCH) region. An offset QW design is utilized to show the impact of hole transport on the temperature dependence of the external differential quantum efficiency and above threshold injection efficiency. A reduction of the current injection efficiency is found for structures which have significant hole transport times in the SCH. Index Terms—Current injection efficiency, InGaAsN, long wave-length quantum-well (QW) laser, material gain, temperature sen-sitivity, thermionic carrier leakage. I