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Formation of one-dimensional metal oxide nanowires formation. Some are based on evaporation and condensa-tion mechanism, i.e., vapor–solid (VS) model [8,12,13], or short-circuit diffusion up the center of the NWs [14–18]. as a result of the accumulation and relaxation of compres-sive stresses in the oxidation processes [19–21]. Unclear to the oxide growth is controlled via outward diffusion of cat-ions during the oxidation of Cu [15,17,28–32]. The new oxide formation occurs at the gas/oxide interface so that the oxide layer grows preferentially into free space. Such unconstrained growth would not be expected to develop stress (the effect of epitaxial stress is limited to the first ⇑ Corresponding author