A CXXXX American Chemical Society Doping Dependence of the Raman Spectrum of Defected Graphene

aman spectroscopy is one of themost used characterization techniques in carbon science and technology.1 The measurement of the Raman spectrum of graphene2 triggered a huge effort to under-stand phonons, electronphonon (eph), magnetophononandelectronelectron (ee) interactions in graphene, aswell as the influ-ence of the number and orientation of layers, electric or magnetic fields, strain, doping, disorder, quality and types of edges, and functional groups.3 Quantifying defects in graphene is crucial both to gain insight in fundamental proper-ties, and for applications. Ref 4 introduced