Abstract—Static Random Access Memory (SRAM) arrays designed in sub-90nm technologies are highly vulnerable to process variation induced read/write/access failures. In memory based reconfigurable computing frameworks, which use large high density memory array, such failures lead to incorrect execution of mapped applications. It causes loss in Quality of Service (QoS) for Digital Signal Processing (DSP) applications. We propose a “Preferential Design ” approach at both application mapping and circuit level, which can significantly improve QoS and yield under large parameter variations. Such a architecture/circuit co-design approach can also tolerate increased failure rate at low operating voltage, thus facilitating low-power operation. Simula...
Abstract — SRAMs typically represent half of the area and more than half of the transistors on a chi...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
The IC industry is facing several major barriers at sub-65nm process nodes due to higher levels of i...
Abstract—Reconfigurable hardware platforms, such as Field Pro-grammable Gate Arrays (FPGA), are bein...
Aggressive technology scaling is leading to large variations in transistor parameters due to process...
Aggressive scaling of transistor dimensions with each technology generation has resulted in increase...
Abstract-this paper proposes a novel Process Variation Aware SRAM architecture designed to inherentl...
textAs semiconductor technology continues to scale, energy-efficiency and power consumption have bec...
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nano...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
As CMOS technology continuously scales, the process variability becomes a major challenge in designi...
This thesis pertains to the design of low power and robust SRAMs without significant area overhead a...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Efficient power management is becoming increasingly important with the rapid growth of portable, wir...
Abstract — SRAMs typically represent half of the area and more than half of the transistors on a chi...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
The IC industry is facing several major barriers at sub-65nm process nodes due to higher levels of i...
Abstract—Reconfigurable hardware platforms, such as Field Pro-grammable Gate Arrays (FPGA), are bein...
Aggressive technology scaling is leading to large variations in transistor parameters due to process...
Aggressive scaling of transistor dimensions with each technology generation has resulted in increase...
Abstract-this paper proposes a novel Process Variation Aware SRAM architecture designed to inherentl...
textAs semiconductor technology continues to scale, energy-efficiency and power consumption have bec...
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nano...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
As CMOS technology continuously scales, the process variability becomes a major challenge in designi...
This thesis pertains to the design of low power and robust SRAMs without significant area overhead a...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
Efficient power management is becoming increasingly important with the rapid growth of portable, wir...
Abstract — SRAMs typically represent half of the area and more than half of the transistors on a chi...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
The IC industry is facing several major barriers at sub-65nm process nodes due to higher levels of i...