The Resurgence of III-N Materials Development: AlInN HEMTs and GaN-on-Si

Heterostructure devices based on the AlInN material system have demonstrated unprecedented high frequency performance but are still limited by materials issues. Likewise, improved crystal growth schemes are envisioned as a key component in the realization of GaN-on-Si high voltage devices for power electronics applications. This work presents materials optimization results from MOCVD growth of quaternary barrier AlInGaN/AlN/GaN HEMTs formed on sapphire and SiC substrates and also a study of AlN nucleation and subsequent GaN growth for crack-free films on silicon (111)