Add to ORKGAbstract—We report studies of amplification arising from the dynamics of electron plasmawaves in a high electronmobility tran-sistor (HEMT) channel with injection from the gate exhibiting neg-ative differential conductance (NDC). The gate NDC can be real-ized in a resonant tunnel diode (RTD) gate structure integrated in the HEMT. Though the electron plasma wave by itself cannot enable amplification, when coupled with gate NDC, they together form a gain medium at terahertz (THz) frequencies due to the higher plasma wave group velocity than the electron drift velocity. The analysis is developed using a distributed circuit model based on the Dyakonov–Shur hydrodynamic theory. Numerical and an-alytical results suggest that these devices can rea...
Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigate...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a res...
The need for bandwidth pushes high data rate applications to higher and higher frequencies. At frequ...
A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of u...
Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to invest...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
In this paper, we report the possibility of silicon (Si) plasma wave transistor (PWT) as a resonant ...
The channel of the field effect transistor can operate as a cavity for plasma waves. For the electro...
The objective of this work is the use of plasma oscillations mechanism in the electron mobility tran...
In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahert...
Resonant tunneling diodes (RTD) are considered as the fastest semiconductor-based electronic devices...
In this work we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a ...
This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with...
Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigate...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a res...
The need for bandwidth pushes high data rate applications to higher and higher frequencies. At frequ...
A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of u...
Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to invest...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
In this paper, we report the possibility of silicon (Si) plasma wave transistor (PWT) as a resonant ...
The channel of the field effect transistor can operate as a cavity for plasma waves. For the electro...
The objective of this work is the use of plasma oscillations mechanism in the electron mobility tran...
In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahert...
Resonant tunneling diodes (RTD) are considered as the fastest semiconductor-based electronic devices...
In this work we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a ...
This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with...
Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigate...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...
In this work, we propose extended design window which is helpful to judge whether the plasma-wave tr...