Add to ORKGSiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of>200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 µm CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire-line circuit examples are also provided
This paper presents an overview on the SiGe technology that could be used to design the future commu...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
Abstract—This paper presents the status of most advanced CMOS and BiCMOS technologies able to addres...
Abstract — The rapid deployment of next generation wireless communications systems creates a unique ...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequenci...
Abstract—This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-...
Recent progress in circuit design techniques for SiGe BiCMOS MMICs in microwave and millimeter-wave ...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
BiCMOS technology was spawned by the need for higher performance digital logics back in the early 19...
Advances in wireless communications and information processing systems require implementation of ver...
AbstractAs silicon-germanium heterojunction bipolar transistors continue to break speed records, inc...
The demonstrated potential of SiGe is reviewed and a performance and cost effective production techn...
While 5G wireless network is being currently deployed around the world, preliminary research activit...
While 5G wireless network is being currently deployed around the world, preliminary research activit...
This paper presents an overview on the SiGe technology that could be used to design the future commu...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
Abstract—This paper presents the status of most advanced CMOS and BiCMOS technologies able to addres...
Abstract — The rapid deployment of next generation wireless communications systems creates a unique ...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequenci...
Abstract—This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-...
Recent progress in circuit design techniques for SiGe BiCMOS MMICs in microwave and millimeter-wave ...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
BiCMOS technology was spawned by the need for higher performance digital logics back in the early 19...
Advances in wireless communications and information processing systems require implementation of ver...
AbstractAs silicon-germanium heterojunction bipolar transistors continue to break speed records, inc...
The demonstrated potential of SiGe is reviewed and a performance and cost effective production techn...
While 5G wireless network is being currently deployed around the world, preliminary research activit...
While 5G wireless network is being currently deployed around the world, preliminary research activit...
This paper presents an overview on the SiGe technology that could be used to design the future commu...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
Abstract—This paper presents the status of most advanced CMOS and BiCMOS technologies able to addres...