InAs=InGaP=GaAs heterojunction power Schottky rectifiers

Chen, M. Young and J.M. Woodall A low-temperature (LT) grown InAs epi-layer has been applied as the gate to the dual-material structure of lattice-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier utilises the strong thermal stability of the InAs=InGaP heterojunction and the high figure-of-merit of the InGaP=GaAs dual-material structure for power devices. The LT-InAs=InGaP=GaAs heterojunction rectifier demon-strates lower on-state resistance, lower off-state leakage current, and higher breakdown voltage, than metal=GaAs Schottky rectifiers. Introduction: In0.49Ga0.51P has been shown to have the highest figure-of-merit (FOM) for high-power applications among the commonly used III–V compound semiconductors [1] owing to its wide bandgap (1.9 eV), high mobility (3000 cm2=Vs) and hig