Noise modeling for RF CMOS circuit simulation

measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a non-quasi-static RF model, based on channel segmentation, which is ca-pable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mecha-nisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise mea-surements, which strongly point toward an explanation of the 1 noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs. Index Terms—1 noise, avalanche noise, compact modeling, flicker noise, induced flicker noise, induced gate noise, MOSFET, noise, RF CMOS, shot noise, thermal noise. I