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Electronics cooling issue of cooling of high power electronic and photonic components and were focused on developing tances from the source to the ambient. The existing approaches of the thermal management are all focused on improvements in heat transport and removal after the heat has exited the backside of the electronic substrate. Examples of such heat transfer methods are high-performance spreaders replacing copper alloy spreaders in conventional systems, enhanced heat-sinks with improvements that reduce their thermal resistance and the power requirements developing approaches to enhance ‘‘near junction’ ’ thermal trans-port in high power electronic and photonic components for which the heat flux in the microscopic active region could be as high as several kW/mm2. The recent investigation of thermal resistance reduction across silicon-based interfaces or devices, is motivated by the heat dissipa-tion in microprocessors [1,2]. Herein we take gallium nitride (GaN) grown on a silicon carbide (SiC) substrate as a realistic example, since it is well-known that GaN high electron mobility transistors (HEMTs) are very attractive for applications such as microwave power amplifiers in wireless base stations and phased array radars ⇑ Corresponding author