A high voltage multijunction solar cell comprises a number of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit...
A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer co...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
The method of constructing a high voltage, low power, multicell solar array is described. A solar ce...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
Technical considerations, preliminary results, and fabrication details are discussed for a family of...
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid...
A multi junction solar cell is provided and includes multiple semiconducting layers and an interface...
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were m...
A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base ...
Geometrically structured surfaces have become increasingly important to solar cell efficiency improv...
At the time of their conception, the cell stack systems to be discussed represent the best semicondu...
Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. ...
A transparent, conductive collector layer containing conductive metal channels is formed as a layer ...
AbstractTandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under ...
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit...
A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer co...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
The method of constructing a high voltage, low power, multicell solar array is described. A solar ce...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
Technical considerations, preliminary results, and fabrication details are discussed for a family of...
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid...
A multi junction solar cell is provided and includes multiple semiconducting layers and an interface...
Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were m...
A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base ...
Geometrically structured surfaces have become increasingly important to solar cell efficiency improv...
At the time of their conception, the cell stack systems to be discussed represent the best semicondu...
Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. ...
A transparent, conductive collector layer containing conductive metal channels is formed as a layer ...
AbstractTandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under ...
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit...
A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer co...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...