Etch-Free Patterning of Poly(3,4-ethylenedioxythiophene)− Poly(styrenesulfonate) for Optoelectronics

ABSTRACT: Spatial control of the conductivity of poly(3,4-ethylenedioxythio-phene)−poly(styrenesulfonate) (PEDOT:PSS) is demonstrated through the use of ultraviolet (UV) exposure. With appropriate UV exposure, electrical characterization shows that the in-plane sheet resistance of PEDOT:PSS films is increased by 4 orders of magnitude compared to unexposed regions. Characterization of the films using Raman spectroscopy identifies a significant reduction of the inter-ring stretching modes between PEDOT monomers and a morphological shift from the quinoid to benzoid form of PEDOT. Additional analysis using Fourier transform infrared spectroscopy indicates a reduction in film doping and a decrease in CC vibrational modes that are associated with PEDOT oligomer length. Height and phase images of these films obtained from atomic force microscopy exhibit a loss of phase segregation in the film between the PEDOT grains and PSS regions. Spectroscopic ellipsometry highlights an increase in both the real and imaginary components of the index upon UV exposure. This broad range of analysis consistently suggests that the increased resistivity can be attributed to a significant reduction in material doping caused by scission-driven decomposition of the conductive PEDOT chains. When flood exposure is combined with the use of an appropriate UV blocking mask, patterning in the conductivity of PEDOT:PSS films can be realized. In contrast to other patterning approaches, no resist development or etching is required for the electrical isolation of certain regions. To demonstrate the efficacy of this process, an organic light emitting diode was fabricated with UV-patterned PEDOT:PSS as a hole transport layer. The regions of unexposed PEDOT:PSS produced electroluminescence, whereas those exposed to UV remained unlit, enabling the realization of pixelated illumination with no removal of material